![]() Our wide STPOWERproduct portfolio combined with state-of-the art packaging and protections for high reliability and safety helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime. The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance and large bipolar current-carrying. ![]() Co-packaged anti-parallel diode option for improved power dissipation and optimal thermal management Renesas insulated-gate bipolar transistors (IGBTs) help designers realize both low saturation voltage and fast switching through thin wafer technology. ![]()
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